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insulated gate bipolar transistor withultrafast soft recovery diode e g n-channel c v ces = 600v i nom = 24a v ce(on) typ. = 1.60v t sc ?? 3 s, t j(max) = 150c g c e gate collector emitter
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%-. absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 24 i c @ t c = 100c continuous collector current 12 i cm pulse collector current, v ge = 15v 72 i lm clamped inductive load current, v ge = 20v 96 a i f @ t c = 25c diode continous forward current 24 i f @ t c = 100c diode continous forward current 12 i fm diode maximum forward current 96 v ge gate-to-emitter voltage 30 p d @ t c = 25c maximum power dissipation 42 w p d @ t c = 100c maximum power dissipation 17 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) thermal resistance parameter min. typ. max. units r ? jc (igbt) thermal resistance junction-to-case-(each igbt) CCC CCC 3.0 c/w r ? jc (diode) thermal resistance junction-to-case-(each diode) CCC CCC 3.7 r ? ja thermal resistance, junction-to-ambient (typical socket mount) CCC 65 CCC
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121 1 downloaded from: http:///

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121 notes: v cc = 80% (v ces ), v ge = 20v, l = 400 h, r g = 22 ? . pulse width limited by max. junction temperature. r ?? is measured at t j of approximately 90c. maximum limits are based on statistical sample size characterization. electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 v v ge = 0v, i c = 1.0ma ? v (br)ces / ? t j temperature coeff. of breakdown voltage 0.51 v/c v ge = 0v, i c = 2.0ma (25c-150c) v ce(on) collector-to-emitter saturation voltage 1.60 1.85 i c = 24a, v ge = 15v, t j = 25c 1 . 6 0 v i c = 24a, v ge = 15v, t j = 150c v ge(th) gate threshold voltage 4.5 7.0 v v ce = v ge , i c = 1.0ma ? v ge(th) / ? tj threshold voltage temp. coefficient -14 mv/c v ce = v ge , i c = 1.0ma (25c - 150c) gfe forward transconductance 26 s v ce = 50v, i c = 24a, pw = 30 s i ces collector-to-emitter leakage current 1.0 30 a v ge = 0v, v ce = 600v 1 . 3m a v ge = 0v, v ce = 600v, t j = 150c v fm diode forward voltage drop 1.50 1.80 v i f = 24a 1 . 4 0 i f = 24a, t j = 150c i ges gate-to-emitter leakage current 100 na v ge = 30v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge (turn-on) 88 130 i c = 24a q ge gate-to-emitter charge (turn-on) 17 26 nc v ge = 15v q gc gate-to-collector charge (turn-on) 43 65 v cc = 400v e on turn-on switching loss 785 1015 i c = 24a, v cc = 400v, v ge = 15v e off turn-off switching loss 780 1010 j r g = 22 ? , l = 400 h, t j = 25c e total total switching loss 1570 2020 energy losses include tail & diode reverse recovery t d(on) turn-on delay time 58 76 i c = 24a, v cc = 400v, v ge = 15v t r rise time 36 54 ns r g = 22 ? , l = 400 h, t j = 25c t d(off) turn-off delay time 249 283 t f fall time 114 133 e on turn-on switching loss 1090 i c = 24a, v cc = 400v, v ge =15v e off turn-off switching loss 1530 j r g =22 ? , l=400 h, t j = 150c e total total switching loss 2620 energy losses include tail & diode reverse recovery t d(on) turn-on delay time 54 i c = 24a, v cc = 400v, v ge = 15v t r rise time 35 ns r g = 22 ? , l = 400 h t d(off) turn-off delay time 295 t j = 150c t f fall time 277 c ies input capacitance 2400 pf v ge = 0v c oes output capacitance 130 v cc = 30v c res reverse transfer capacitance 57 f = 1.0mhz t j = 150c, i c = 96a rbsoa reverse bias safe operating area full square v cc = 480v, vp 600v rg = 22 ? , v ge = +20v to 0v scsoa short circuit safe operating area 3 s v ge = 15v, v cc = 400v, vp 600v rg = 22 ? , r shunt = 11m ??? t c = 100c erec reverse recovery energy of the diode 147 j t j = 150c t rr diode reverse recovery time 105 ns v cc = 400v, i f = 24a i rr peak reverse recovery current 22 a v ge = 15v, rg = 22 ? , l =400 h conditions downloaded from: http:///

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121 0.1 1 10 100 f , frequency ( khz ) 0 2 4 6 8 10 12 14 16 18 20 l o a d c u r r e n t ( a ) for both: duty cycle : 50% tj = 150c tcase = 100c gate drive as specified power dissipation = 16.7w fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) i square wave: v cc diode as specified fig. 2 - maximum dc collector current vs. case temperature fig. 3 - power dissipation vs. case temperature fig. 4 - forward soa t c = 25c, t j ?? 150c, v ge =15v fig. 5 - reverse bias soa t j = 150c, v ge =20v 25 50 75 100 125 150 t c (c) 0 5 10 15 20 25 i c ( a ) 25 50 75 100 125 150 t c (c) 0 10 20 30 40 50 p t o t ( w ) 10 100 1000 v ce (v) 1 10 100 1000 i c ( a ) 1 10 100 1000 10000 v ce (v) 0.01 0.1 1 10 100 i c ( a ) 1msec 10 sec 100 sec tc = 25c tj = 150c single pulse dc downloaded from: http:///

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121 3 fig. 6 - typ. igbt output characteristics t j = -40c; tp = 30 s fig. 7 - typ. igbt output characteristics t j = 25c; tp = 30 s 0 2 4 6 8 10 v ce (v) 0 20 40 60 80 100 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 0 2 4 6 8 10 v ce (v) 0 20 40 60 80 100 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v fig. 8 - typ. igbt output characteristics t j = 150c; tp = 30 s fig. 9 - typ. diode forward characteristics tp = 30 s fig. 11 - typical v ce vs. v ge t j = 25c fig. 10 - typical v ce vs. v ge t j = -40c 5 1 01 52 0 v ge (v) 1 2 3 4 5 6 7 8 v c e ( v ) i ce = 6.0a i ce = 12a i ce = 24a i ce = 48a 5 1 01 52 0 v ge (v) 1 2 3 4 5 6 7 8 v c e ( v ) i ce = 6.0a i ce = 12a i ce = 24a i ce = 48a 0 2 4 6 8 10 v ce (v) 0 20 40 60 80 100 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 0.0 1.0 2.0 3.0 v f (v) 0 20 40 60 80 100 i f ( a ) -40c 25c 150c downloaded from: http:///

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121 4 fig. 12 - typical v ce vs. v ge t j = 150c fig. 13 - typ. transfer characteristics v ce = 25v; tp = 30 s 0 5 10 15 v ge (v) 0 10 20 30 40 50 60 70 80 90 100 i c e ( a ) t j = 25c t j = 150c 5 1 01 52 0 v ge (v) 0 1 2 3 4 5 6 7 8 v c e ( v ) i ce = 6.0a i ce = 12a i ce = 24a i ce = 48a fig. 14 - typ. energy loss vs. i c t j = 150c; l = 400 h; v ce = 400v, r g = 22 ? ; v ge = 15v fig. 15 - typ. switching time vs. i c t j = 150c; l = 400 h; v ce = 400v, r g = 22 ? ; v ge = 15v fig. 16 - typ. energy loss vs. r g t j = 150c; l = 400 h; v ce = 400v, i ce = 24a; v ge = 15v fig. 17 - typ. switching time vs. r g t j = 150c; l = 400 h; v ce = 400v, i ce = 24a; v ge = 15v 0 1 02 03 04 05 0 i c (a) 0 500 1000 1500 2000 2500 3000 e n e r g y ( j ) e off e on 0 10 20 30 40 50 i c (a) 1 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 20 40 60 80 100 rg ( ? ) 0 500 1000 1500 2000 2500 e n e r g y ( j ) e off e on 0 20 40 60 80 100 r g ( ? ) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on downloaded from: http:///

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121 5 fig. 18 - typ. diode i rr vs. i f t j = 150c fig. 19 - typ. diode i rr vs. r g t j = 150c 10 15 20 25 30 35 40 45 50 i f (a) 10 15 20 25 30 i r r ( a ) r g = 10 ? r g = 22 ? r g = 47 ? r g = 100 ? 0 25 50 75 100 r g ( ?? 16 18 20 22 24 26 28 i r r ( a ) fig. 20 - typ. diode i rr vs. di f /dt v cc = 400v; v ge = 15v; i f = 24a; t j = 150c fig. 21 - typ. diode q rr vs. di f /dt v cc = 400v; v ge = 15v; t j = 150c 200 300 400 500 600 700 800 di f /dt (a/ s) 16 18 20 22 24 26 28 i r r ( a ) 0 200 400 600 800 1000 di f /dt (a/ s) 0 500 1000 1500 2000 2500 q r r ( n c ) 10 ? 22 ? 100 ? 47 ? 12a 24a 48a fig. 22 - typ. diode e rr vs. i f t j = 150c 10 20 30 40 50 i f (a) 50 100 150 200 250 300 e n e r g y ( j ) r g = 10 ? r g = 22 ? r g = 47 ? r g = 100 ? fig. 23 - v ge vs. short circuit time v cc = 400v; t c = 25c 8 1 01 21 41 61 8 v ge (v) 4 6 8 10 12 14 t i m e ( s ) 5 10 15 20 25 30 c u r r e n t ( a ) t sc i sc downloaded from: http:///

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121 6 fig 26. maximum transient thermal impedance, junction-to-case (igbt) fig. 25 - typical gate charge vs. v ge i ce = 24a; l = 600 h 0 2 04 06 08 01 0 0 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 400v v ces = 300v fig. 27. maximum transient thermal impedance, junction-to-case (diode) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i ? ri ci= ? i ? ri ? ? c ? 4 ? 4 r 4 r 4 ri (c/w) ?? i (sec) 0.40773 0.0006570.55987 0.002467 1.37229 0.108148 1.36164 2.2461 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i ? ri ci= ? i ? ri ? ? c ? 4 ? 4 r 4 r 4 ri (c/w) ?? i (sec) 0.19486 0.0002560.32103 0.001648 1.21121 0.116269 1.27150 2.1752 fig. 24 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz 0 100 200 300 400 500 v ce (v) 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres downloaded from: http:///

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121 7 fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit 0 1k vcc dut l l rg 80 v dut vcc + - fig.c.t.5 - resistive load circuit rg vcc dut r = vcc icm fig.c.t.3 - s.c. soa circuit fig.c.t.4 - switching loss circuit l rg vcc dut / driver diode clamp / dut -5v dc 4x dut vcc downloaded from: http:///

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121 8 fig. wf3 - typ. diode recovery waveform @ t j = 150c using fig. ct.4 fig. wf1 - typ. turn-off loss waveform @ t j = 150c using fig. ct.4 fig. wf2 - typ. turn-on loss waveform @ t j = 150c using fig. ct.4 fig. wf4 - typ. s.c. waveform @ t j = 25c using fig. ct.3 -100 0 100 200 300 400 500 -3e-01 -1e-01 1e-01 3e-01 tim e (s) v ce (v ) -10 0 10 20 30 40 50 i ce (a ) test current 90% test current 5% v ce 10% test current tr eon loss -30 -20 -10 0 10 20 30 -0.25 -0.05 0.15 0.35 time (ns) i f (a) pe a k i rr t rr q rr -100 0 100 200 300 400 500 600 -2.0 0.0 2.0 4.0 6.0 8.0 time (s) vce (v) -100 0 100 200 300 400 500 600 ice (a) vce ic e -100 0 100 200 300 400 500 -5e-01 0e+00 5e-01 1e+00 time(s) v ce (v) -10 0 10 20 30 40 50 i ce (a) 90% i ce 5% v ce 10% i ce eoff loss tf downloaded from: http:///

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121 1 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. this product has been designed and qualified for industrial market. qualification standards can be found on irs web site. note: for the most current drawing please refer to ir website at http://www.irf.com/package/ to-220ab full-pak package outlinedimensions are shown in millimeters (inches) to-220ab full-pak part marking information

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to-220ab full-pak package is not recommended for surface mount application. downloaded from: http:///

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